Silicon Carbide Schottky Rectifier
Silicon Carbide Schottky Rectifier
Silicon Carbide Schottky Rectifiers are developed for high-voltage, high-frequency and high-efficiency power-conversion systems.
Based on SiC technology, these devices are particularly suitable for applications where switching performance, high-voltage capability and system efficiency are critical. They provide an attractive rectification solution for next-generation power electronics, especially in renewable energy, charging infrastructure and industrial power systems.
Silicon Carbide Schottky Rectifier
Filter 49 products by Package, VRRM, IF, Configuration, IFSM_Max, VF_Max, Rated IF, Status, IR@125°C(uA), Tj, Trr_Max and IR@25°C(uA).
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VRRM(V)
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IF(A)
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Configuration
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IFSM_Max(A)
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VF_Max(V)
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Status
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IR@125°C(uA)
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Tj(°C)
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Trr_Max(ns)
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IR@25°C(uA)
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VRRM(V)
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IF(A)
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IFSM_Max(A)
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VF_Max(V)
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Rated IF(A)
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IR@125°C(uA)
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Tj(°C)
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(No data available)
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IR@25°C(uA)
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| TO-252 | 650 | 6 | Single Positive | 57 | 2.07 | 3 | Active | - | -55℃~+175℃ | - | 50 | |
| TO-220AC | 1,200 | 5 | Single Positive | 65 | 2.66 | 2.5 | Active | - | -55℃~+175℃ | - | 200 | |
| TO-252-2L | 650 | 6 | Single Positive | 75 | 2.07 | 3 | Active | - | -55℃~+175℃ | - | 50 | |
| TO-252-2L | 650 | 8 | Single Positive | 80 | 1.41 | 4 | Active | - | -55℃~+175℃ | - | 20 | |
| TO-220AC | 650 | 10 | Single Positive | 85 | 1.42 | 5 | Active | - | -55℃~+175℃ | - | 50 | |
| TO-252-2L | 650 | 10 | Single Positive | 80 | 1.57 | 5 | Active | - | -55℃~+175℃ | - | 20 | |
| TO-263-2L | 650 | 10 | Single Positive | 96 | 1.57 | 5 | Active | - | -55℃~+175℃ | - | 20 | |
| TO-220AC | 650 | 20 | Single Positive | 190 | 1.46 | 10 | Active | 19 | -55℃~+175℃ | - | 50 | |
| TO-263-2L | 650 | 20 | Single Positive | 190 | 1.46 | 10 | Active | - | -55℃~+175℃ | - | 50 | |
| TO-220AC | 1,200 | 20 | Single Positive | 185 | 1.65 | 10 | Active | - | -55℃~+175℃ | - | 200 | |
| TO-247AC | 1,200 | 20 | Single Positive | 185 | 1.65 | 10 | Active | - | -55℃~+175℃ | - | 200 | |
| TO-220AC | 650 | 30 | Single Positive | 220 | 1.6 | 15 | Active | - | -55℃~+175℃ | - | 20 |
COMMON INQUIRIES
SILICON CARBIDE SCHOTTKY RECTIFIERS FAQ
SiC Schottky rectifiers are commonly considered in high-voltage, high-frequency, and high-efficiency power-conversion applications, including PFC, solar, energy storage, and industrial power systems.
They target different operating ranges. SiC devices are commonly used in higher-voltage switching applications, while silicon Schottky devices are often used in lower-voltage designs with low forward-loss requirements.
No. Although SiC can offer favorable switching characteristics, total loss, package thermal resistance, cooling design, current waveform, and ambient temperature still need to be evaluated.
Not without verification. Confirm voltage and current ratings, forward loss, leakage, package, drive conditions, layout, EMI behavior, thermal performance, and total system cost.
Provide topology, DC-bus or reverse voltage, switching frequency, RMS and peak current, ambient temperature, cooling method, target package, system efficiency target, and existing device information.
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