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Testing Capability
FROM WAFER TO SHIPMENT
Independent Full-Industry-Chain Testing Safeguards Every Power Device
As a professional manufacturer of rectifier diodes and power semiconductors, we are well aware that chip design determines the upper limit of performance, packaging technology determines the lower limit of products, and reliability testing is the only standard for verifying product quality.
Our company has a complete power device reliability testing laboratory and failure analysis center, with full process testing capabilities from wafer level to finished product level. Every diode, rectifier, and thyristor shipped must undergo four layers of checks: electrical performance verification, environmental stress screening, accelerated aging of lifespan, and root cause analysis of failure, to ensure stability and reliability in diverse application scenarios such as consumer power supplies, industrial control equipment, high-frequency inverters, and new energy.
Full Parameter Electrical Performance Verification
100% full inspection for shipment, the core parameters of each component can withstand verification
Extreme Environmental Stress Screening
From -40°C to 175°C full coverage, eliminating packaging defects layer by layer
Accelerated Aging Life Verification
Thousand hour HTRB power cycle ensures long-term reliable service
Accurate Root Cause Analysis of Failure
X-Ray, SAM, and cross-sectional metallography, tracing from failure to process closure
Electrical Performance Testing
Testing Capability: Forward Voltage Drop (VF), Reverse Leakage Current (IR), Breakdown Voltage V(BR)R, On Resistance Rds(on)
The forward voltage drop VF directly determines the conduction loss of the rectifier device, and the reverse leakage current IR reflects the reliability of the chip in the blocking state – these two parameters are the core quality indicators of diodes, rectifiers, and thyristors. Our company conducts 100% full parameter electrical performance testing on all finished products to ensure that the key parameters such as VF and IR of each product comply with the specified values in the specification book, and to eliminate parameter false labeling and batch consistency fluctuations.
Products Covered: ordinary rectifiers, fast recovery rectifiers FRED, Schottky, silicon carbide Schottky, thyristors, power transistors.
High Temperature Reverse Bias Test (HTRB)
Testing Capability: High Temperature Reverse Bias (HTRB) – Verify the long-term stability of the device under high temperature and reverse bias conditions
In application scenarios such as photovoltaic inverters, energy storage PCS, and EV charging stations, rectifier diodes are in a high-temperature reverse bias state for a long time. The HTRB test verifies the leakage current drift and breakdown risk of the PN junction of the chip under high temperature and high voltage by applying 80% of the rated reverse voltage at the highest junction temperature (Tj=150 ℃ or 175 ℃) and accelerating aging for 1000 hours. This test is also a core assessment item for AEC-Q101 vehicle certification.
Our HTRB reliability testing machine can simultaneously monitor the leakage current change curves of multiple samples, accurately identify early failure batches, and ensure the long-term reliability of products under harsh working conditions.
Power Cycling/Intermittent Life Test
Testing Capability: Power cycling – simulating junction temperature fluctuations under real operating conditions to verify the fatigue life of high-power devices in frequent on-off cycles
In application scenarios such as electric drive inverters for new energy vehicles and high-frequency inverter welding machines, power diodes and thyristors undergo long-term thermal stress cycles of conduction, heating, shutdown, and cooling. The power cycling test uses active application of load current to self-heat the chip, simulating the fluctuation of junction temperature (Tj) during the actual switching process of the analog device, accelerating the excitation of failure modes such as solder layer fatigue, bond point detachment, and step-increase in thermal resistance caused by material CTE mismatch.
Our company’s power cycle testing complies with international standards such as AQG 324, IEC 60747-9, JESD22-A122, providing reliable life data support for high-power FRED, Schottky, thyristor and other devices in the fields of new energy, industrial control, and automotive electronics.
Thermal Cycling/Thermal Shock Test
Testing Capability: High and Low Temperature Cycle Testing, Cold and Hot Shock Testing – Evaluating the Structural Reliability of Devices under Sudden Temperature Changes
Power devices frequently experience alternating heating and cooling during startup and shutdown in practical operation. The difference in coefficient of thermal expansion (CTE) of different packaging materials (silicon chips, solder, lead frames, plastic encapsulation resins) can generate mechanical stress during temperature cycling, and long-term accumulation may lead to solder layer cracks, bond wire fractures, or plastic encapsulation delamination.
Our company’s high and low temperature cycling testing machine performs a specified number of temperature cycles within the range of -40 ℃ to 150 ℃ according to the GB/T 2423.22 standard. Combined with X-ray void rate detection, it strictly monitors the trend of crack propagation and void changes inside the solder layer, effectively eliminating early defective products with packaging defects.
Reliability Testing (HTRB/H3TRB/THB)
Testing Capability: High temperature and high humidity reverse bias (H3TRB), temperature and humidity bias testing (THB) – to verify the device’s tolerance in a combined environment environment of humidity, high temperature, and high voltage
For application scenarios such as LED drivers, outdoor communication power supplies, photovoltaic junction boxes, etc. exposed to humid environments, H3TRB testing applies reverse bias voltage under high temperature and high humidity conditions of 85 ℃/85% RH to test the device’s moisture resistance and corrosion resistance under wet heat coupling stress.
Our THB/H3TRB testing capabilities cover various types of encapsulated diodes, rectifier bridges, and thyristors, effectively identifying leakage current exceeding standards and interface delamination issues caused by moisture absorption of encapsulated colloids.
Burn-in Test (Long-term Operation Test)
Testing Capability: High-Temperature Burn-in — Exposing early-stage failures through prolonged powered operation to enhance factory yield.
Even new products that meet all electrical parameter specifications may harbor latent defects—stemming from wafer imperfections, packaging stress, or surface contamination—that could lead to early-stage failure. Burn-in testing accelerates the exposure of these potential failures by subjecting devices to rated operating currents in a high-temperature environment for extended durations (ranging from 48 to 500 hours or longer), thereby ensuring batch consistency and long-term product stability.
Failure Analysis
Testing Capabilities: Failure Analysis and Root Cause Tracing—Linking failure phenomena back to chip fabrication and packaging processes.
When clients encounter abnormal failures or internal inspections identify defective units, our failure analysis team executes a systematic diagnostic workflow. This includes electrical re-testing, X-ray void inspection (using fully automated equipment), Scanning Acoustic Microscopy (SAM) for delamination analysis, and cross-sectional metallographic analysis. We precisely pinpoint the root cause—whether it stems from inherent chip defects, packaging process anomalies, or over-stress during client application—enabling the rapid formulation of corrective actions and facilitating a closed-loop improvement process on the production line.
Pre-Shipment Inspection
Testing Capabilities: 100% electrical performance testing, batch sampling, and full-process traceability.
We implement a 100% inspection policy prior to shipment. Every component undergoes comprehensive electrical parameter testing using an automated tester (TMTT) before leaving the factory; test data is uploaded to the MES system in real-time, ensuring traceability of parameters for every batch and individual component. Integrated with automated processes for arraying, singulation, and tape-and-reel packaging, this ensures the delivery of zero-defect products with consistent parameters to our customers.
Conclusion
Quality is not merely the result of testing, yet testing serves as the definitive standard for verifying quality. Leveraging our vertically integrated capabilities across the entire supply chain—spanning chip design, wafer fabrication, and packaging & testing—we maintain full control over every stage of production. This ensures that every rectifier diode we ship can withstand rigorous operating conditions, including high frequencies, high temperatures, and high humidity.
Please contact us for a detailed list of our testing capabilities should you have specific testing requirements or need customized reliability verification solutions.
